BUK95150-55A,127

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BUK95150-55A,127 datasheet

• Маркировка
  BUK95150-55A,127
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK95150-55A,127 Configuration: Single Continuous Drain Current: 13 A Current - Continuous Drain (id) @ 25?° C: 13A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 1950443 Input Capacitance (ciss) @ Vds: 339pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 53W Power Dissipation: 53000 mW Rds On (max) @ Id, Vgs: 137 mOhm @ 13A, 10V Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934056260127, BUK95150-55A
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

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